The short answer is yes, but it's important to provide some context to our approach. PLECS uses ideal switch components to model power semiconductors as a first step. Our library doesn't contain physical models, such as in a SPICE tool, where detailed transient switching behavior can be observed. Having said all that, PLECS does contain several behavioral models for simulating dynamic parasitic effects in power semiconductors. This includes limited di/dt during MOSFET turn-on and turn-off and diode reverse recovery, for example. These models are intended to allow chopping of inductive currents and detect critical overvoltages that may occur across stray inductors.
Look at the bottom of the list of Power Semiconductors in the Electrical components library and you will see these, including the "MOSFET with Limited di/dt". The PLECS demo model "Buck Converter with Stray IGBT Tail Current" highlights this concept, and the active switch in this example could easily be replaced by the dynamic MOSFET component.