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"Leakage Resistance" necessary with Single Active Bridge?

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In order to simulate the course of the flux density in a single active bridge / push-pull converter (left 2 switches, right 4 diodes) that has no metallic core,  must all the semiconductors in the circuit (as in the tutorial for the flow converter from the magnetic domain, please see in the Appendix attached reference model: magnetics_domain_2.plecs,) get  a "Leakage Resistance" in parallel?

Is there another way to simulate the flow of such a single-active bridge?
asked Jun 17 by ipek (12 points)

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