During the loss analysis, I left a message because I had an inquiry about DIODE loss.
Currently, ROHM’s bsm400d12p3g002 model is divided into MOSFET and DIODE for loss analysis, and in the case of MOSFET model, we confirmed that the same result as the data provided by ROHM is outputted.
The problem is DIODE, and in the case of DIODE, it was confirmed that the data of the conduction loss part was provided and entered the same, but the switching loss is not known because the data is not provided.
Currently, the formula used in ROHM’s IGBT is used, Err vs. ID data is entered in Turn-off data, and Err vs. Rg data is entered in the Custom Table.
================================
If you know how to configure the formula used for the Turn-On and Turn-Off formulas and the calculation process, it would be very helpful.
Additionally, I would appreciate it if you could let me know if there is anything I need to enter in the MOSFET and DIODE settings, not in the Thermal Description window.
The problem is DIODE, and in the case of DIODE, it was confirmed that the data of the conduction loss part was provided and entered the same, but the switching loss is not known because the data is not provided.
Overall, this would best be discussed with a ROHM applications engineer.
As you suggested, in the model I can access from the ROHM website there is no turn-on or turn-off losses associated with the diode. There is only conduction losses.
Looking at the datasheet the reverse recovery losses are quite small compared to the other switching losses (Figs. 12 - 14). From section 6.5.1 and 6.6.2 of the following ROHM collateral “In the SiC power modules, the recovery loss (Err) is nearly zero thanks to the high speed recovery performance of the SBD (or the body diode of the MOSFET).” and “Irr and trr of the SiC SBD are very small and the loss is negligible” especially compared to IGBT + FRD.
The reverse recovery losses likely can simply be neglected with a marginal loss in accuracy. Depending on how the data was generated, it is also possible that the small the Err losses are effectively be included in the Turn-On/Off losses of the FET.
Additionally, I would appreciate it if you could let me know if there is anything I need to enter in the MOSFET and DIODE settings, not in the Thermal Description window.
You can leave the electrical circuit parameters the same as those provided by the manufacturer in their model.