I am simulating a circuit with two full bridges (primary with MOSFETs and secondary with IGBTs) shown in the image.
I use ‘MOSFET with diode‘ and ‘IGBT with diode‘ for the parts. In the thermal models I use, body diode conduction is included by entering negative values for conduction that correspond to body diode conduction parameters in the datasheet.
In the circuit, I am trying to only have the antiparallel diodes conduct on the secondary full bridge by having the duty cycles of the switches set to zero. When I do that, the results do not correspond to when I have a diode full bridge or an active switch full bridge with gate control signals.
I know that with MOSFETS, I can enable “use gate dependent conduction losses” in the conduction losses portion of the thermal model, but I do not seem to have that option for IGBTs. I think this is why the results do not agree. I may be wrong on this.
I am wondering if there might be a thermal model implementation caveat with the “IGBT with diode” that I am not adhering to, and would be grateful for troubleshooting insights.
