How to get GaN HEMT model in PLECS 5.0.1

General
1

Hi everyone,

I am working on a power electronics simulation in PLECS and need to incorporate a GaN device from Infineon (e.g., from the CoolGaN™ series) into my circuit.

I have a few questions:

  1. MOSFET Model compatibility – Can I use the standard PLECS MOSFET component to model a GaN HEMT by simply plugging in the datasheet parameters (Rds(on), Ciss, Coss, Crss, gate threshold, etc.)? Are there any known limitations with this approach for GaN devices?

  2. Dedicated GaN component – Is there a dedicated GaN HEMT component in PLECS, or is one planned? GaN devices have unique characteristics (no body diode recovery, different threshold voltage behavior) that the standard MOSFET model may not capture accurately.

  3. Vendor library / Thermal model – Does Infineon provide a PLECS-compatible component library for their CoolGaN™ parts, similar to the thermal FOSTER/CAUER RC network models some vendors supply? If so, where can I download it?

2

Hi,

have you taken a look at the PLECS models provided by Infineon? GaN transistors (GaN HEMTs) | Infineon Technologies

At the bottom of the page you have “Design sources” → “Simulation models” : CoolGaN™ 650 V PLECS Simulation Model | Infineon

3

Hi,

I am using the same XML file. Is it the xml file is enough that i can upload into mosfet model or I need to design GaN HEMT model

4

Those XML files are meant to be used with the PLECS “MOSFET with Diode” component. If it required some special electrical component they would also need to provide it, but it is not the case.

5

Keep in mind that PLECS semiconductor switch blocks are based on an ideal switch, including whether the true MOSFET is Si, GaN, or something else. Therefore a GaN HEMT is modeled using a MOSFET with Diode block in PLECS, still based on an ideal switch. If you need to simulate the physical behavior then you can use PLECS Spice, but the standard library components for switches are not going to provide that level of detail.

So to answer your first question, there are no PLECS MOSFET block parameters for the true device capacitances, gate threshold, etc.

You can however still include GaN-specific loss behavior in the traditional thermal description and that is the intention of the Infineon XML file model that you are using.

6

Thanks kris for detailed explanation