how to model the losses for the mosfet with the body diode?

How to include the reverse recovery losses of the body diode in a mosfet, e.g. SiC mosfet?

In the model of the mosfet with diode there is no posibility of entering the reverse recovery losses. The question is then: how to accurately include this losses in the simulation model?

Many thanks

Hello, as per the below screenshot of the PLECS User Manual on this topic, you can enter the body diode Err losses in the left half plane (negative currents) of the Turn-off losses table: