Separate .xml thermal description of MOSFET+Diode into two independent

PLECS
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1

Dear Mr/Ms,

As I couldn’t find how to set diode electrical parameters in the MOSFET with Diode default block, I decided to try to separate the thermal description of the component into two independent files and build my own MOSFET with antiparallel Diode with their respective .xml.

The problem arises when I cannot match the turn-off losses between the original and the new setup and it seems that it comes from the tables. The procedure followed to fill the two independent files from the common one is:

MOSFET:

The conduction of the mosfet depends on the state of the gate terminal. Consequently:

  • Turn-on losses not modified.
  • Turn-off losses no longer dependent on the diode recovery. These losses will appear in the Diode file.
  • Turn-off losses no longer dependent on negative current values. If the switch already conducts through the diode, Zero-Voltage-Switching. Negative current values eliminated.
  • Conduction losses with gate off eliminated. These losses correspond to the diode when is forward-biased.
  • The thermal resistance left at the default value to not alter the losses and temperature calculations.

DIODE:

In order to obtain a ‘standard’ diode model, the negative values of currents and voltages are transposed in the corresponding tables.

Mosfet constants and gate tables/variables have been eliminated.

  • Turn-on losses are considered negligible.
  • Turn-off losses dependent on the recovery and deadtime.
  • Unique conduction losses, which correspond to the diode when is forward-biased.
  • The thermal resistance left at the default value to not alter the losses and temperature calculations.

Here the three attached files:

FF1MR12MM1HP_B11_mosfet.xml (26.0 KB)

FF1MR12MM1HP_B11_diode.xml (16.7 KB)

FF1MR12MM1HP_B11.xml (35.8 KB)

Thanks in advance!