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I’m currently using the manufacturer-provided PLECS model for the Wolfspeed C3M0120100K SiC MOSFET. Before I proceed with system-level simulations, I’d like to confirm whether this model already includes the intrinsic body diode behavior. Specifically, does the XML model contain third-quadrant conduction and reverse-recovery characteristics, or do I need to add an external diode component in PLECS to accurately represent the device’s body diode? Any clarification from users familiar with Wolfspeed’s PLECS models would be greatly appreciated.
Hi JiaZheng,
I just looked at Wolfspeeds website and see that they have uploaded a new set of PLECS thermal models (updated 11/25).
In the new release they have combined the diode losses into the thermal loss description and assigned the device type to be “MOSFET with DIODE”.
I looked at the new data for the C3M0120100K and notice the following:
- the diode and switching conduction losses have been separated out - they have a Cond. Loss (Gate On) and Cond. Loss (Gate Off) tab to separate out the losses of the FET conducting in reverse direction (Gate On) and the diode conducting (Gate Off)
- the switching losses are saturated to 0uJ below 0A so it appears reverse recovery losses are not modeled or negligible.
Let me check in with a colleague who has been working closely with Wolfspeed on that last point. He’s unfortunately out of office till after thanksgiving. We’ll get back to you once he is back.
Okay, thank you for your reply. I’ll trouble you again.
Hi JiaZheng,
Sorry for the delayed response. According to my colleague, Wolfspeed may release new models with Err added before the end of the year, though it’s not yet clear which components will be affected. In the meantime, you can contact their AE team for more information on Err.
Thank you for your reply. I would like to ask what Err is?
Err refers to the reverse recovery energy loss of diodes.
Okay, thank you for your reply. I will look into it further.